Patent · US Active

SRAM with reconfigurable setting

US12362011B2 · kind B2 · utility

0Cited by
1References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 12, 2022
Grant dateJul 15, 2025
Priority date
Expiry dateApr 12, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C7/24
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A static random access memory device includes a memory matrix provided with at least one set of SRAM memory cells and a circuit for initializing cells of the set, the setting circuit being able to carry out various setting types and in particular a “deterministic” setting in which the cells are established at an imposed value and to carry out a “free” setting in which the cells are established at a value that depends on their manufacturing method.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.