Semiconductor chamber components with advanced coating techniques
US12362150B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2023 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Apr 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0453
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present technology is generally directed to semiconductor processing systems and methods. Systems and methods include a chamber having a plurality of chamber components, such as a pedestal, a lid stack, a faceplate, electrode, and a showerhead. The faceplate is supported with the lid stack and defines a plurality of first apertures and the showerhead is positioned between the faceplate and the pedestal and defines a plurality of second apertures. In systems and methods, the faceplate, the showerhead, the lid stack, the pedestal, or a combination thereof include an yttrium fluoride, yttrium oxyfluoride, or both yttrium fluoride and yttrium oxyfluoride coating having a thickness of greater than 10 μm on at least a portion of the respective chamber component or combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.