Patent · US Active

Method of producing a semiconductor body with a trench, semiconductor body with at least one trench and semiconductor device

US12362230B2 · kind B2 · utility

0Cited by

5References

13Claims

0Family size

Assignee

AMS AG · AT

Inventors

Georg Parteder · Gleisdorf, AT
Thomas Bodner · Seiersberg, AT

Key dates

Filing date	Oct 23, 2020
Grant date	Jul 15, 2025
Priority date	—
Expiry date	Feb 24, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/811
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is proposed of producing a semiconductor body with a trench. The semiconductor body comprises a substrate. The method comprising the step of etching the trench into the substrate using an etching mask. An oxide layer is formed at least on a sidewall of the trench by oxidation of the substrate. A passivation layer is formed on the oxide layer and the bottom of the trench. The passivation layer is removed from the bottom of the trench. Finally, a metallization layer is deposited into the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.