Semiconductor device
US12362264B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 2, 2022 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jul 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/475
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first terminal, a second terminal, a first chip, and a resistance part. The first chip includes a substrate electrically connected to the second terminal, a nitride semiconductor layer located on the substrate, a first drain electrode located on the nitride semiconductor layer and electrically connected to the first terminal, a first source electrode located on the nitride semiconductor layer and electrically connected to the second terminal, and a substrate capacitance between the first drain electrode and the substrate. The resistance part is connected in series in a path including the substrate capacitance between the first drain electrode and the second terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.