Formation of gate all around device
US12363948B2 · kind B2 · utility
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4References
30Claims
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Key dates
| Filing date | Oct 11, 2021 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Nov 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise an oxide layer and a semiconductor material layer between source regions and drain regions of the device. The method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer. An alternative method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by a surface treatment, and then radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.