Method for depositing a Group IV semiconductor and related semiconductor device structures
US12363960B2 · kind B2 · utility
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2,215References
17Claims
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Key dates
| Filing date | Jun 14, 2022 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jun 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a Group IV semiconductor is disclosed. The method may include, providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The methods may further include, exposing the substrate to at least one Group IV precursor and exposing the substrate to at least one Group IIIA metalorganic dopant precursor. The methods may further include depositing a Group IV semiconductor on a surface of the substrate. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.