Patent · US Active

Semiconductor device

US12363961B2 · kind B2 · utility

0Cited by

8References

26Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Carsten Schaeffer · Annenheim, AT
Patrick HANEKAMP · Papiermühle, DE
Oliver Humbel · Maria Elend, AT
Angelika Koprowski · Klagenfurt, AT
Wolfgang Lehnert · Lintach, DE
Francisco Javier Santos Rodriguez · Villach, AT

Key dates

Filing date	Nov 15, 2021
Grant date	Jul 15, 2025
Priority date	—
Expiry date	Nov 29, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/112
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and a method of forming a semiconductor device are provided. In an embodiment, the semiconductor device comprises a device region, an edge termination region surrounding the device region, a first metal feature in the edge termination region, a first conformal ion diffusion barrier layer over the first metal feature, and a first conformal chemical protection layer over the first conformal ion diffusion barrier layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.