Integrated circuit structures with backside gate partial cut or trench contact partial cut
US12364001B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2021 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Nov 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Integrated circuit structures having backside gate partial cut or backside trench contact partial cut and/or spit epitaxial structure are described. For example, an integrated circuit structure includes a first sub-fin structure over a first stack of nanowires. A second sub-fin structure is over a second stack of nanowires. A first portion of a gate electrode is around the first stack of nanowires, a second portion of the gate electrode is around the second stack of nanowires, and a third portion of the gate electrode bridges the first and second portions of the gate electrode. A dielectric structure is between the first portion of the gate electrode and the second portion of the gate electrode, the dielectric structure over the third portion of the gate electrode. The dielectric structure is continuous along the first and second portions of the gate electrode and the first and second sub-fin structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.