Mohammad HASAN
7Patents
1h-index
26Co-inventors
43Inventor score
Filing activity: Sep 24, 2019 → Feb 9, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11804523B2 | High aspect ratio source or drain structures with abrupt dopant profile | Electricity | 1 | Active |
| US11990472B2 | Fabrication of gate-all-around integrated circuit structures having pre-spacer deposition cut gates | Electricity | 0 | Active |
| US12288808B2 | High aspect ratio source or drain structures with abrupt dopant profile | Electricity | 0 | Active |
| US12369392B2 | Fabrication of gate-all-around integrated circuit structures having pre-spacer deposition cut gates | Electricity | 0 | Active |
| US12364001B2 | Integrated circuit structures with backside gate partial cut or trench contact partial cut | Electricity | 0 | Active |
| US12364002B2 | Integrated circuit structures having metal gates with tapered plugs | Electricity | 0 | Active |
| US12176408B2 | Localized spacer for nanowire transistors and methods of fabrication | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.