Internal chamber processing method and substrate processing method
US12371783B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2021 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Jun 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to an internal chamber processing method, and more particularly, to an internal chamber processing method for performing processing on a chamber and a component inside the chamber. Disclosed is an internal chamber processing method for processing the inside of a chamber in which substrate processing is performed, the method including a pressurizing operation (S100) of raising a pressure inside a chamber to a first pressure (P1) higher than the atmospheric pressure by using a pressurized gas and a depressurizing operation of lowering the pressure inside the chamber from the first pressure (P1) to a second pressure (P2) after the pressurizing operation (S100). The pressurizing operation (S100) and the depressurizing operation (S200) are performed in a state in which a substrate to be processed is removed from the inside of the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.