Silicon wafer and method for producing silicon wafer
US12371813B2 · kind B2 · utility
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Key dates
| Filing date | Jun 14, 2021 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Dec 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3221
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon wafer is a Czochralski wafer formed of silicon. The wafer includes a bulk layer having an oxygen concentration of 0.5×1018/cm3 or more; and a surface layer extending from the surface of the wafer to 300 nm in depth, and having an oxygen concentration of 2×1018/cm3 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.