Extreme ultraviolet (EUV) lithography using an intervening layer or a multi-layer stack with varying mean free paths for secondary electron generation
US12372872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2020 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Jun 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0277
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for patterning a substrate includes providing a substrate, and depositing a multi-layer stack including N layers on the substrate. N is an integer greater than one. The N layers include N mean free paths for secondary electrons, respectively. The method includes depositing a photoresist layer on the multi-layer stack, wherein the N mean free paths converge in the photoresist layer. Another method for patterning a substrate includes providing a substrate and depositing a layer on the substrate. The layer includes varying mean free paths for secondary electrons. The method includes depositing a photoresist layer on the layer. The varying mean free paths for secondary electrons converge in the photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.