Memory (NVM) devices for use with recurrent neural networks
US12373113B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2024 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Jan 8, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06N3/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Recurrent Neural Networks (RNNs) wherein a non-volatile memory (NVM) array provides a memory bank for the RNN. The RNN may include a Neural Turning Machine (NTM) and the memory bank may be an NTM matrix stored in the NVM array. In some examples, a data storage device (DSD) that controls the NVM array includes both a data storage controller and a separate NTM controller. The separate NTM controller accesses the NTM matrix of the NVM array directly while bypassing flash translation layer (FTL) components of the data storage controller. Additionally, various majority wins error detection and correction procedures are described, as well as various disparity count-based procedures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.