Patent · US Active

Power module having vertically aligned first and second substrates

US12374661B2 · kind B2 · utility

0Cited by

2References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Adrian Lis · Regensburg, DE
Ewald Guenther · Regenstauf, DE
Thomas Schmid · Zürich, CH

Key dates

Filing date	Aug 5, 2022
Grant date	Jul 29, 2025
Priority date	—
Expiry date	Feb 1, 2044

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/48225
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A power module includes: a first substrate having a patterned first metallization; a second substrate vertically aligned with the first substrate and having a patterned second metallization that faces the patterned first metallization; first vertical power transistor dies having a drain pad attached to a first island of the patterned first metallization and a source pad electrically connected to a first island of the patterned second metallization via first spacers; and second vertical power transistor dies having a source pad electrically connected to the first island of the patterned first metallization via second spacers. A first subset of the second vertical power transistor dies has a drain pad attached to a second island of the patterned second metallization. A second subset of the second vertical power transistor dies has a drain pad attached to a third island of the patterned second metallization. A method of producing the module is described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.