Air inner spacers
US12376337B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2021 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Sep 12, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes a method to form a semiconductor device with air inner spacers. The method includes forming a semiconductor structure on a first side of a substrate. The semiconductor structure includes a fin structure having multiple semiconductor layers on the substrate, an epitaxial structure on the substrate and in contact with the multiple semiconductor layers, a gate structure wrapped around the multiple semiconductor layers, and an inner spacer structure between the gate structure and the epitaxial structure. The method further includes removing a portion of the substrate from a second side of the substrate to expose the epitaxial structure and the inner spacer structure, forming an oxide layer on the epitaxial structure on the second side of the substrate, and removing a portion of the inner spacer structure to form an opening. The second side is opposite to the first side of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.