Patent · US Active

Methods for filling a gap and related systems and devices

US12381087B2 · kind B2 · utility

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19Claims
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Assignee

Inventor

Key dates

Filing dateMar 30, 2022
Grant dateAug 5, 2025
Priority date
Expiry dateNov 16, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/666
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise a proximal part comprising a proximal surface and a distal part comprising a distal surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus the proximal surface is inhibited while leaving the distal surface substantially unaffected. Then, the methods comprise a step of selectively depositing a metal- and nitrogen-containing material on the distal surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.