Atomic layer deposition with plasma source
US12383923B2 · kind B2 · utility
0Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2017 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Aug 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.