In-situ epi growth rate control of crystal thickness micro-balancing sensor
US12385159B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2022 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Nov 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68742
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are quartz crystal film thickness monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.