Method for calibrating simulation process based on defect-based process window
US12386268B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2021 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Jun 7, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70641
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.