Silicon germanium fins and integration methods

US12389627B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Hong Yu · Rexford, US
• Haiting Wang · Clifton Park, US
• Zhenyu Hu · Leonberg, DE

Key dates

• Filing date: Dec 16, 2021
• Grant date: Aug 12, 2025
• Expiry date: Jun 6, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/832

Abstract

A structure is provided, the structure comprising a substrate and a first silicon germanium fin over the substrate. A first silicon germanium layer may be arranged in the substrate, whereby the first silicon germanium layer may be coupled to the first silicon germanium fin. A second silicon germanium layer may be arranged in the substrate, whereby the second silicon germanium layer may be coupled to the first silicon germanium fin.