Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

US12396172B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Collin Howder · Boise, US
• Jeffrey Ehorn · Meridian, US
• John D. Hopkins · Meridian, US

Key dates

• Filing date: Apr 5, 2022
• Grant date: Aug 19, 2025
• Expiry date: Apr 14, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/35

Abstract

A memory array comprising strings of memory cells comprises laterally-spaced memory-blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above conductor material of a conductor tier. Channel-material-string constructions extend through the insulative and conductive tiers to a lowest of the conductive tiers. The channel-material-string constructions individually comprise a charge-blocking-material string, a storage-material string laterally-inward of the charge-blocking-material string, a charge-passage-material string laterally-inward of the storage-material string, and a channel-material string laterally-inward of the charge-passage-material string. A lowest surface of the charge-blocking-material string that is above a lowest surface of the lowest conductive tier is below a lowest surface of a lowest of the insulative tiers that is immediately-above the lowest conductive tier. Conductive material in the lowest conductive tier directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier. Structure independent of method is di…