Semiconductor device
US12396229B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 4, 2024 |
| Grant date | Aug 19, 2025 |
| Priority date | — |
| Expiry date | Jul 4, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a heat transfer layer disposed over a substrate, a channel material layer, a gate structure and source and drain terminals. The channel material layer has a first surface and a second surface opposite to the first surface, and the channel material layer is disposed on the heat transfer layer with the first surface in contact with the heat transfer layer. The gate structure is disposed above the channel material layer. The source and drain terminals are in contact with the channel material layer and located at two opposite sides of the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.