Suspend-resume-go techniques for memory devices
US12399653B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2024 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Apr 26, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F3/0659
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The memory device includes a memory block with an array of memory cells that are arranged in word lines. The word lines are in electrical communication with respective word line drivers and switches. Control circuitry is configured to program the memory cells of a selected word line in a programming operation during which the control circuitry applies an elevated voltage to the selected word line and receives a command to suspend the programming operation. With the word line switch associated with the selected word line turned on, the control circuitry ramps the selected word line from the elevated voltage to a reduced gate holding voltage and then turn the word line switch associated with the selected word line off to electrically isolate the selected word line from the associated word line driver so that the selected word line remains at the gate holding voltage until the programming operation resumes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.