Adaptive negative word line voltage
US12400720B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2022 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Sep 11, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage device comprises: a non-volatile memory including control circuitry and an array of memory cells formed using a set of word lines and a set of bit lines. A controller, coupled to the non-volatile memory, configured to: determine, based on a stage of a product lifetime of the non-volatile memory, a negative word line setting for implementing during performance of a first operation; perform the first operation, the first operation including adjusting, based on the negative word line setting, a negative word line relative parameter; determine, based on another stage of the product lifetime of the non-volatile memory, another negative word line setting for implementing during performance of a second operation; and perform the second operation, the second operation including adjusting, based on the other negative word line setting, another negative word line relative parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.