Xiaoyu Che
6Patents
0h-index
5Co-inventors
27Inventor score
Filing activity: Jun 25, 2021 → Nov 16, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US12205647B2 | Programming techniques to reduce programming stress in a memory device | Electricity | 0 | Active |
| US11887674B2 | Utilizing data pattern effect to control read clock timing and bit line kick for read time reduction | Physics | 0 | Active |
| US12400720B2 | Adaptive negative word line voltage | Physics | 0 | Active |
| US12142323B2 | Foggy-fine drain-side select gate re-program for on-pitch semi-circle drain side select gates | Physics | 0 | Active |
| US11605437B2 | Memory programming with selectively skipped verify pulses for performance improvement | Electricity | 0 | Active |
| US12399813B2 | Sense time separation in foggy-fine program to improve optimal VT width | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.