Contact over active gate structures with conductive trench contact taps for advanced integrated circuit structure fabrication
US12400913B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2021 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Nov 29, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Contact over active gate (COAG) structures with conductive trench contact taps are described. In an example, an integrated circuit structure includes a plurality of gate structures above a substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon. One of the plurality of conductive trench contact structures includes a conductive tap structure protruding through the corresponding trench insulating layer. An interlayer dielectric material is above the trench insulating layers and the gate insulating layers. A conductive structure is in direct contact with the conductive tap structure of the one of the plurality of conductive trench contact structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.