Capacitor and inductor embedded structure and manufacturing method therefor, and substrate

US12402414B2 · kind B2 · utility

Assignee

• Zhuhai ACCESS Semiconductor Co., Ltd. · CN

Inventors

• Xianming Chen · Longbeilingcun, CN
• Lei Feng · Longbeilingcun, CN
• Weiyuan YANG · Zhuhai, CN
• Benxia HUANG · Zhuhai, CN
• Yejie HONG · Longbeilingcun, CN

Key dates

• Filing date: Jul 24, 2020
• Grant date: Aug 26, 2025
• Expiry date: Nov 8, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692

Abstract

A capacitor and inductor embedded structure and a manufacturing method therefor, and a substrate are disclosed. The method includes: providing a metal plate; sequentially depositing and etching a first protective layer, a thin film dielectric layer, a second protective layer, and an upper electrode layer on an upper surface of the metal plate to form a thin film capacitor and a capacitor upper electrode; pressing an upper dielectric layer to the upper surface of the metal plate, covering the thin film capacitor and the capacitor upper electrode, and etching the metal plate to form a capacitor lower electrode; pressing a lower dielectric layer to a lower surface of the metal plate, and performing drilling on the upper dielectric layer and the lower dielectric layer to form inductor through holes and capacitor electrode through holes; electroplating metal to form an inductor and circuit layers.