Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy
US12402535B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2021 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Nov 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.