Resistive memory with selector, equipped with a write capacitor, and associated writing method
US12406724B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Dec 12, 2022 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Mar 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory includes at least one resistive memory cell and a write device. The memory cell includes a memory element having at least a highly resistive state and a lowly resistive state, and a selector arranged in series with the memory element, the selector being electrically conductive when a voltage greater than a given threshold voltage is applied to the selector. The write device includes at least one write capacitor and one charging device, and is configured to charge the write capacitor and then to connect it to the memory cell to program that cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.