Method for depositing boron and gallium containing silicon germanium layers

US12406846B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Lucas Petersen Barbosa Lima · Heverlee, BE
• Joe Margetis · Gilbert, US
• John Tolle · Gilbert, US
• Rami Khazaka · Antibes, FR
• Qi Xie · Wilsele, BE

Key dates

• Filing date: May 21, 2021
• Grant date: Sep 2, 2025
• Expiry date: Aug 18, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02642
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and devices for epitaxially growing boron- and gallium-doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.