Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication
US12406931B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2022 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Jun 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Contact over active gate (COAG) structures with etch stop layers, and methods of fabricating contact over active gate (COAG) structures using etch stop layers, are described. In an example, an integrated circuit structure includes a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon. A first dielectric etch stop layer is directly on and continuous over the trench insulating layers and the gate insulating layers. A second dielectric etch stop layer is directly on and continuous over the first dielectric etch stop layer, the second dielectric etch stop layer distinct from the first dielectric etch stop layer. An interlayer dielectric material is on the second dielectric etch stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.