Patent · US Active

Semiconductor chip having a crack stop structure

US12406940B2 · kind B2 · utility

0Cited by

2References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Sergey Ananiev · Ottobrunn, DE
Andreas Bauer · Obernburg, DE
Michael Goroll · Poing, DE
Maria Heidenblut · Schwarzenfeld, DE
Stefan Kaiser · Greensboro, US
Gunther Mackh · Dresden, DE
Kabula Mutamba · Pentling, DE
Reinhard Pufall · Birkenfeld, DE
Georg Reuther · Hochstädt, DE

Key dates

Filing date	Jan 24, 2022
Grant date	Sep 2, 2025
Priority date	—
Expiry date	Nov 23, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/585
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor chip having a crack stop structure is disclosed. The crack stop structure includes one or more recesses formed in the semiconductor chip. The one or more recesses extend adjacent to and along a periphery of the semiconductor chip. The one or more recesses are filled with a metal material. The metal material has an intrinsic tensile stress at room temperature that induces compressive stress in at least a region of the periphery of the semiconductor chip.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.