Semiconductor device with a single diffusion break structure and a gate structure having aligned sidewalls
US12408393B2 · kind B2 · utility
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11References
8Claims
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Key dates
| Filing date | Jun 7, 2023 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Jun 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.