Inventor · Hsinchu, TW

Ming-Jui Chen

44Patents
4h-index
46Co-inventors
63Inventor score

Filing activity: Jan 23, 2001 → Jun 7, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6420077B1 Contact hole model-based optical proximity correction method Physics 12 Expired
US8627242B1 Method for making photomask layout Physics 7 Active
US8701052B1 Method of optical proximity correction in combination with double patterning technique Physics 5 Active
US9104833B2 Mask set for double exposure process and method of using the mask set Physics 4 Active
US8151221B2 Method to compensate optical proximity correction Emerging Cross-Sectional Technologies 4 Active
US8782572B1 Method of optical proximity correction Physics 3 Active
US9524361B2 Method for decomposing a layout of an integrated circuit Physics 3 Active
US8321820B2 Method to compensate optical proximity correction Emerging Cross-Sectional Technologies 3 Active
US8383299B2 Double patterning mask set and method of forming thereof Electricity 3 Active
US8930858B1 Method for optical proximity correction Physics 3 Active
US7312020B2 Lithography method Physics 3 Expired
US8598712B2 Semiconductor structure formed by double patterning technique Electricity 3 Active
US9785046B2 Pattern verifying method Physics 3 Active
US8778604B2 Mask set for double exposure process and method of using the mask set Physics 3 Active
US9627036B2 Static random access memory layout structure Electricity 2 Active
US9613969B2 Semiconductor structure and method of forming the same Electricity 2 Active
US9047658B2 Method of optical proximity correction Physics 2 Active
US8966410B2 Semiconductor structure and method for fabricating semiconductor layout Electricity 1 Active
US8885917B2 Mask pattern and correcting method thereof Physics 1 Active
US8321822B2 Method and computer-readable medium of optical proximity correction Physics 1 Active
US9208276B1 Method for generating layout pattern Physics 1 Active
US7141337B2 Phase shift mask Physics 1 Expired
US8741507B1 Method for separating photomask pattern Physics 1 Active
US8745547B1 Method for making photomask layout Physics 0 Active
US12408393B2 Semiconductor device with a single diffusion break structure and a gate structure having aligned sidewalls Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.