Integrated low k recovery and ALD metal deposition process for advanced technology node
US12410523B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2024 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Jul 16, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In some embodiments, a method includes positioning a substrate within a processing chamber. The substrate includes a first low-k film having a first water contact angle. The first low-k film is disposed over an interconnect structure. The method further includes cleaning the substrate within the processing chamber to form a cleaned substrate. The cleaned substrate includes a damaged low-k film having a second water contact angle. The method further includes exposing the cleaned substrate to a recovery precursor to form a recovered substrate. The recovered substrate includes a recovered low-k film. The method further includes exposing the recovered substrate to a UV light source to form a treated substrate. The treated substrate includes a treated low-k film having a third water contact angle. The method further includes depositing a liner layer over the treated substrate via atomic layer deposition (ALD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.