Chi-I Lang
97Patents
19h-index
102Co-inventors
87Inventor score
Filing activity: Jun 15, 1998 → Jul 16, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7915139B1 | CVD flowable gap fill | Electricity | 775 | Active |
| US6413583B1 | Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound | Electricity | 641 | Expired |
| US7582555B1 | CVD flowable gap fill | Electricity | 563 | Expired |
| US7888233B1 | Flowable film dielectric gap fill process | Electricity | 543 | Active |
| US7514375B1 | Pulsed bias having high pulse frequency for filling gaps with dielectric material | Electricity | 530 | Active |
| US8440259B2 | Vapor based combinatorial processing | Chemistry; Metallurgy | 518 | Active |
| US7211525B1 | Hydrogen treatment enhanced gap fill | Electricity | 498 | Expired |
| US8821985B2 | Method and apparatus for high-K gate performance improvement and combinatorial processing | Performing Operations; Transporting | 324 | Active |
| US7524735B1 | Flowable film dielectric gap fill process | Electricity | 124 | Active |
| US7629198B2 | Methods for forming nonvolatile memory elements with resistive-switching metal oxides | Electricity | 98 | Active |
| US7972897B2 | Methods for forming resistive switching memory elements | Electricity | 69 | Active |
| US7435684B1 | Resolving of fluorine loading effect in the vacuum chamber | Electricity | 61 | Active |
| US6709715B1 | Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds | Electricity | 47 | Expired |
| US6086952A | Chemical vapor deposition of a copolymer of p-xylylene and a multivinyl silicon/oxygen comonomer | Performing Operations; Transporting | 46 | Expired |
| US6486082B1 | CVD plasma assisted lower dielectric constant sicoh film | Emerging Cross-Sectional Technologies | 39 | Expired |
| US8580697B1 | CVD flowable gap fill | Electricity | 34 | Active |
| US6107184A | Nano-porous copolymer films having low dielectric constants | Emerging Cross-Sectional Technologies | 33 | Expired |
| US8481403B1 | Flowable film dielectric gap fill process | Electricity | 24 | Active |
| US7678607B2 | Methods for forming resistive switching memory elements | Electricity | 23 | Active |
| US7902064B1 | Method of forming a layer to enhance ALD nucleation on a substrate | Electricity | 19 | Active |
| US7381451B1 | Strain engineering—HDP thin film with tensile stress for FEOL and other applications | Electricity | 19 | Expired |
| US8809161B2 | Flowable film dielectric gap fill process | Electricity | 19 | Active |
| US7482245B1 | Stress profile modulation in STI gap fill | Electricity | 18 | Active |
| US7727906B1 | H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift | Electricity | 16 | Active |
| US7704789B2 | Methods for forming resistive switching memory elements | Electricity | 16 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.