Patent · US Active

Integrated circuit structure with filled recesses

US12412838B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Inventors

Kevin Lin · Beaverton, US
Nafees Kabir · Portland, US
James M. Blackwell · Portland, US
Rami Hourani · Santa Clara, US

Key dates

Filing date	Jun 18, 2019
Grant date	Sep 9, 2025
Priority date	—
Expiry date	Jan 6, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/15311
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed herein are IC structures, packages, and devices that include recesses processed via selective growth. An example integrated circuit (IC) structure, includes a first dielectric material, a second dielectric material on the first dielectric material, and a recess in the second dielectric material, wherein the recess includes a bottom, a top, and sidewalls. The IC further includes a first material within the recess and at a bottom of the recess, wherein the first material includes a metal and oxygen, a self-assembled monolayer (SAM) material, or an organic material, and a second material within the recess and between the first material and the top of the recess, wherein the second material is in contact with the sidewalls of the recess.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.