Method for manufacturing an OxRAM-type resistive memory cell and associated OxRAM-type memory cell
US12414485B2 · kind B2 · utility
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Inventors
Key dates
| Filing date | Dec 18, 2024 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Dec 18, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A method for manufacturing an OxRAM resistive memory cell, includes forming a TiN lower electrode, firstly implanting Si atoms into the lower electrode with a first implantation dose and a first implantation acceleration voltage, the first implantation dose being strictly positive and strictly lower than 0.7·1014 cm−2, secondly implanting Si atoms into the lower electrode with a second implantation dose and a second implantation acceleration voltage strictly greater than the first implantation acceleration voltage, the second implantation dose being strictly positive and strictly lower than 0.6·1014 cm−2, the first and second acceleration voltages being selected to have an implantation profile following the first and second implantations having a maximum Si concentration at a depth of between 1 and 3 nm from the upper surface of the lower electrode, depositing an active layer onto the lower electrode implanted, depositing an upper electrode onto the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.