Method for forming storage node contact structure and semiconductor structure
US12419041B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2021 |
| Grant date | Sep 16, 2025 |
| Priority date | — |
| Expiry date | Aug 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
Abstract
Provided is a method for forming a storage node contact structure and a semiconductor structure. The method for forming a storage node contact structure comprises: providing a substrate, bit line structures being formed on a surface of the substrate and contact holes being formed between the bit line structures; and growing silicon crystal in the contact holes and adding a doping source in a growth process, in which a doping concentration of the doping source when the growth is over is greater than a doping concentration when the growth is started so as to form silicon crystal gradual change structures in the contact holes, in which the silicon crystal changes from monocrystalline silicon to heavily doped polycrystalline silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.