Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
US12424282B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Jan 11, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory array comprising strings of memory cells comprises a conductor tier comprising conductor material. Laterally-spaced memory blocks individually comprise a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Conducting material of a lower of the conductive tiers directly electrically coupling together the channel material of individual of the channel-material strings and the conductor material of the conductor tier. The conducting material in the lower conductive tier comprises upper conductively-doped semiconductive material, lower conductively-doped semiconductive material, and intermediate material vertically there-between. The intermediate material is of different composition from those of the upper conductively-doped semiconductive material and the lower conductively-doped semiconductive material and comprises at least one of carbon, nitrogen, oxygen, metal, and n-type doped material also comprising boron. Other embodiments, including method, re disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.