Halogenation-based gapfill method and system
US12424490B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2022 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Feb 28, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for forming material within a gap on a surface of a substrate are disclosed. An exemplary method includes forming a material layer on a surface of the substrate within a first reaction chamber, exposing the material layer to a halogen reactant in a second reaction chamber to thereby form a flowable layer comprising a halogen within the gap, and optionally exposing the flowable layer to a converting reactant in a third reaction chamber to form a converted material within the gap. Exemplary methods can further include a step of heat treating the flowable layer or the converted material. Exemplary systems can perform the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.