Chemical-mechanical planarization pad and methods of use
US12427618B2 · kind B2 · utility
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6References
20Claims
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Key dates
| Filing date | Nov 2, 2021 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Apr 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some implementations described herein relate to dispensing a slurry onto a polishing pad for a chemical-mechanical planarization (CMP) process. These implementations also involve rotating the polishing pad while the slurry is dispensed onto the polishing pad. Rotation of the polishing pad results in a traversal of the slurry radially outward toward a polishing pad outer edge of the polishing pad. The polishing pad includes a plurality of groove segments and a geometric patterns formed by the plurality of the groove segments impede the flow of the slurry to the polishing pad outer edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.