Chemical mechanical polishing slurry composition for polishing boron silicon compound, chemical mechanical polishing method and method of fabricating semiconductor device using the same
US12428581B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 18, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Oct 20, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A CMP slurry composition for polishing a boron silicon (B—Si) compound may include a catalyst, an abrasive including a plurality of particles and being configured to polish the boron silicon (B—Si) compound, and a pH adjuster. The CMP slurry composition may further include an oxidizer. The catalyst may have a binary catalyst configuration comprising a first catalyst material and a second catalyst material. The first catalyst material may include Fe, and the second catalyst material may include Cu. The oxidizer may include hydrogen peroxide (H2O2). A CMP (chemical mechanical polishing) method for a boron silicon (B—Si) compound may include providing a substrate structure including a thin film formed of the boron silicon (B—Si) compound and performing a CMP process on the thin film. The CMP process is performed by using the CMP slurry composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.