Topology-selective deposition method and structure formed using same
US12428728B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Sep 5, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Sep 5, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A topology-selective deposition method is disclosed. An exemplary method includes depositing a first layer of material overlying a gap or feature on a substrate surface, depositing a second layer of material overlying the first layer of material, and selectively removing the first layer of material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.