Method for generating patterning device pattern at patch boundary
US12430490B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2023 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Oct 23, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.