Substrate processing method and substrate processing apparatus
US12431335B2 · kind B2 · utility
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2References
21Claims
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Key dates
| Filing date | Mar 22, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Oct 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one exemplary embodiment, a substrate processing method is provided. This substrate processing method comprises the steps of: providing a substrate including a metal compound film and a mask defining an opening on the metal compound film to a plasma processing chamber; and etching the metal compound film by forming a plasma from a first processing gas including a boron- and halogen-containing gas and a hydrogen-containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.