Method of preparing semiconductor structure having low dielectric constant layer
US12432899B2 · kind B2 · utility
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4References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 29, 2022 |
| Grant date | Sep 30, 2025 |
| Priority date | — |
| Expiry date | Oct 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/31
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application provides a method of preparing a semiconductor structure. The method includes providing a conductive film; disposing a barrier layer over the conductive film; disposing a first dielectric layer over the barrier layer; disposing a patterned hard mask over the first dielectric layer; and removing a portion of the first dielectric layer exposed through the patterned hard mask, wherein the removal of the portion of the first dielectric layer includes providing a nitrogen plasma to collide with the portion of the first dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.