Microelectronic devices including stack structures having doped interfacial regions, and related systems and methods

US12432984B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Everett A. McTeer · Eagle, US
• Farrell M. Good · Meridian, US
• John Mark Meldrim · Boise, US
• Jordan D. Greenlee · Boise, US
• Justin D. Shepherdson · Meridian, US
• Naiming Liu · Boise, US
• Yifen Liu · Nanhu, CN

Key dates

• Filing date: May 27, 2022
• Grant date: Sep 30, 2025
• Expiry date: Mar 8, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/037

Abstract

A microelectronic device comprises conductive structures and insulative structures vertically alternating with the conductive structures. At least one of the insulative structures includes interfacial regions extending inward from vertical boundaries of the at least one of the insulative structures, and central region vertically interposed between the interfacial regions. The interfacial regions are doped with one or more of carbon and boron. The insulative structures comprise a lower concentration of the one or more of carbon and boron than the interfacial regions. Additional microelectronic devices, electronic systems, and methods are also described.