High sensitivity positive resist layers and mask formation process
US3934057A · kind A · utility
31Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1973 |
| Grant date | Jan 20, 1976 |
| Priority date | — |
| Expiry date | Dec 19, 1993 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31928
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high sensitivity resist layer structure for high energy radiation exposure is formed by coating plural layers of radiation degradable polymers on a substrate which layers are successively slower dissolving in the resist developer. Upon exposure and solvent development, a resist edge profile is obtained which is particularly useful for metal lift-off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.