Dielectrically isolated Schottky Barrier structure and method of forming the same
US3956527A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1974 |
| Grant date | May 11, 1976 |
| Priority date | — |
| Expiry date | Oct 3, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A planar integrated circuit structure having a dielectrically isolated Schottky Barrier contact. The structure has pockets of silicon surrounded by isolating regions of silicon dioxide extending from a planar surface, the silicon dioxide regions and silicon pockets being substantially coplanar at said surface. A layer of dielectric material, such as silicon nitride or a composite of silicon nitride over silicon dioxide, covers the surface. There is at least one opening extending through the dielectric layer to a coincident silicon pocket; the opening has larger lateral dimensions than said pocket so as to expose the pocket and a portion of the silicon dioxide region surrounding the pocket. A metallic layer in this opening forms a Schottky Barrier contact with the exposed silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.